BAS16 switching diode features fast switching speed for general purpose switching applications high conductance marking: a6 maximum ratings @t a =25 o c electrical characteristics (tamb=25 o c unless otherwise specified) test conditions max unit i r = 100a v v r =75v 1 a i f =1ma i f =10ma i f =50ma i f =150ma 0.715 0.855 1 1.25 v v r =0, f=1mhz 2 pf i f =i r =10ma,i rr =0.1i r , r l =100 6 ns www.americanmicrosemi.com BAS16 sot-23 plastic-encapsulate diode dekra certification inc. as9100c and iso 9001:2008 certificate no. 131519.01 document page 1 of 2 revised 05/2016 tel. 1-973-377-9566 fax. 1-973-377-3078 133 kings road madison, new jersey 07940 united states of america ? 2016 american microsemiconductor, inc. specifications are subject to change without notice diode capacitance c d reverse recovery time t rr reverse voltage leakage current i r power dissipation p d 225 storage temperature t stg -55~+150 thermal resistance junction to ambient r ja 556 junction temperature tj 150 average rectified output current i o 150 peak forward surge current @=1.0s @=1.0s i fsm 2.2 1.0 o c parameter symbol limits non-repetitive peak reverse voltage v rm 100 peak repetitive peak reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 75 rms reverse voltage v r(rms) 53 forward continuous current i fm 300 ma a mw o c/w o c v v unit v ma symbol v (br) r 75 parameter reverse breakdown voltage min forward voltage v f rohs
typical characteristics BAS16 www.americanmicrosemi.com tel. 1-973-377-9566 fax. 1-973-377-3078 133 kings road madison, new jersey 07940 united states of america ? 2016 american microsemiconductor, inc. specifications are subject to change without notice document page 2of 2 revised 05/2016 dekra certification inc. as9100c and iso 9001:2008 certificate no. 131519.01 BAS16 rohs
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